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- W2021987140 abstract "Subsurface reactions of organic low dielectric (low k) film exposed to plasmas with low ion bombardment energy were investigated by a real time analysis of Fourier transform infrared attenuated total reflection (FT-IR ATR). The exposure of N2 plasma resulted in the formation of a CN layer composed of C(sp2)=N and C(sp3)–N bonds. After the N2 plasma exposure, the surface was exposed to H2 plasma. C(sp1)≡N and C(sp2)=N bonds were removed by the H radicals, while the C(sp3)–N bond remained. It was found that the C(sp3)–N bond was the key chemical bond against H2 plasma exposure. Based on the analyses, a reaction model for anisotropic profile in organic low k film etching employing N–H plasmas is proposed." @default.
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- W2021987140 date "2003-03-01" @default.
- W2021987140 modified "2023-10-18" @default.
- W2021987140 title "Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N<sub>2</sub>and H<sub>2</sub>Gas Chemistry" @default.
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- W2021987140 doi "https://doi.org/10.1143/jjap.42.l212" @default.
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