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• W2021988363 abstract "We investigated flexible amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) on a polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and ultrathin Al2O3. IGZO TFTs were fabricated with hybrid PVP/Al2O3 gate dielectrics having Al2O3 layers of different nanoscale thicknesses, which were deposited by atomic layer deposition (ALD). The electrical characteristics of the TFTs with the organic/inorganic hybrid gate dielectrics were measured after cyclic bending up to 1,00,000 cycles at the bending radius of 10 mm. The ultrathin Al2O3 layer in the hybrid gate dielectrics improved the mechanical flexibility and protected the organic gate dielectric against damage during the sputter deposition of the IGZO layer. Finite elements method (FEM) simulations along with the structural characterization of the cyclically bent device showed the importance of optimizing the thickness of the Al2O3 layer in the hybrid gate dielectrics to obtain mechanically stable and flexible a-IGZO TFTs." @default.
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• W2021988363 date "2014-07-01" @default.
• W2021988363 modified "2023-10-16" @default.
• W2021988363 title "Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors" @default.
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• W2021988363 doi "https://doi.org/10.1016/j.orgel.2014.04.003" @default.
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