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- W2021997486 abstract "The electrical characteristics of NMOS capacitors fabricated using high quality, ultra-thin SiO<SUB>2</SUB>, grown by in-situ steam generation (SSG) in a rapid thermal processing system, and a clustered amorphous SI gate electrode is reported. The results show that, in addition to the enhanced growth rate of ISSG oxides, the lower stress-induced leakage current and significantly improved reliability of ISSG SiO<SUB>2</SUB> such as a longer time-to-breakdown characteristics, as compared to SiO<SUB>2, such as a longer time-to-breakdown under a constant voltage stress and larger charge-to-breakdown characteristics, as compared to SiO(subscript 2</SUB> of similar equivalent oxide thickness grown by rapid thermal oxidation (RTO). In addition, it is also found that the reliability of ISSG oxide is considerably improved as the H<SUB>2</SUB> percentage increases. The result of Fourier- transformed IR spectroscopy indicates that ISSG oxides exhibit lower compressive strain than RTO oxides. Such appreciably improved reliability of ISSG oxide and reduced compressive strain may be explained by the reduction of defects within the structural transition layer between SiO<SUB>2</SUB> and Si substrate, such as weak Si-Si bonds and strained Si-O bonds, by highly reactive oxygen atom s which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen." @default.
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- W2021997486 date "2000-08-18" @default.
- W2021997486 modified "2023-10-02" @default.
- W2021997486 title "Correlation between the reliability of ultrathin ISSG SiO 2 and hydrogen content" @default.
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- W2021997486 doi "https://doi.org/10.1117/12.395732" @default.
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