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- W2022005140 abstract "A simple computationally effective semi-analytical macroscopic technique of self-consistent calculations of the electrical properties of the MOS structures with ultra thin high-k gate oxide film is developed. Calculated gate voltage - gate leakage [substrate-injected direct and Fowler-Nordheim (FN) tunneling] and gate capacitance characteristics are presented and discussed. The Si/oxide band offset is shown to be the main parameter affecting leakage. The stepwise behaviour of the <i>I - V</i> characteristics is predicted. A contribution of the FN injection is discussed." @default.
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- W2022005140 date "2004-05-28" @default.
- W2022005140 modified "2023-09-23" @default.
- W2022005140 title "<title>A self-consistent modeling of the leakage current through thin oxides</title>" @default.
- W2022005140 doi "https://doi.org/10.1117/12.562733" @default.
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