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• W2022007161 abstract "On the basis of density functional theory calculations, we have systematically investigated the electronic properties of armchair-edge graphene nanoribbons (GNRs) doped with boron (B) and nitrogen (N) atoms. B (N) atoms could effectively introduce holes (electrons) to GNRs and the system exhibits p- (n-) type semiconducting behavior after B (N) doping. According to the electronic structure calculations, Z-shape GNR-based field effect transistors (FETs) is constructed by selective doping with B or N atoms. Using first-principles quantum transport calculations, we demonstrate that the B-doped p-type GNR-FETs can exhibit high levels of performance, with high ON/OFF ratios and low subthreshold swing. Furthermore, the performance parameters of GNR-FETs could be controlled by the p-type semiconducting channel length." @default.
• W2022007161 created "2016-06-24" @default.
• W2022007161 creator A5043790307 @default.
• W2022007161 date "2011-01-01" @default.
• W2022007161 modified "2023-09-27" @default.
• W2022007161 title "Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics" @default.
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• W2022007161 doi "https://doi.org/10.1016/j.physleta.2010.12.050" @default.
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