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- W2022029134 abstract "Abstract The adsorption and reaction of NO 2 on n-type Ga-rich GaAs(100) was studied using AES, TPD, HREELS, and MQS. At 78 K all the adsorbed NO 2 up to 4 L exposure reacts to oxidize the surface and desorb NO. At higher exposures NO 2 accumulates on the surface as the N 2 O 4 dimer. Saturation of the oxidation reaction, corresponding to monolayer oxide formation, occurs at a NO 2 exposure of about 30 L. A small amount of NO 3 is also formed, which can be increased by repeated cycles of dosing and heating to 150 K to desorb unreacted NO 2 . Annealing the sample to 800 K develops a HREELS oxide band centered at 84 meV, which is assigned as a gallium oxide structure. All of the oxide is desorbed at Ga 2 O in a narrow peak at about 800 K. Exposure of the clean surface to NO 2 at 300 K is found to oxidize the surface as efficiently as at 78 K." @default.
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- W2022029134 title "Surface oxidation of GaAs(100) by adsorption of NO2" @default.
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- W2022029134 doi "https://doi.org/10.1016/0039-6028(92)90511-4" @default.
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