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• W2022049536 abstract "We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2–SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s−1, 105 and 0.36 V dec−1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties." @default.
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• W2022049536 date "2007-05-22" @default.
• W2022049536 modified "2023-10-17" @default.
• W2022049536 title "High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate" @default.
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• W2022049536 doi "https://doi.org/10.1088/0268-1242/22/7/002" @default.
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