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- W2022067247 abstract "Surface activated bonding (SAB) by Ar beam sputter etching has been proved to have ability to bond various semiconductor wafers at room temperature. In this paper, we report SAB of oxide wafers. Various oxide wafers were successfully bonded to Si wafers by SAB. Strong bonding equivalent to bulk strength was achieved without any heat treatments. Among the oxide wafers tested, SiO2 was only a material which was not form strong bond with Si at room-temperature. On the other hand, strength of oxide-to-oxide bonding by SAB was not so strong as bulk materials and was largely dependent on the bonded oxide materials. In case of oxide-to-oxide bonding, SiO2 was again difficult to bond. Deposited thin oxide film such as TiO2 could be bonded by SAB and was effective to improve bonding properties. In summary, oxide wafers were successfully bonded by SAB at room-temperature, however its strength depends on oxide materials." @default.
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- W2022067247 date "2008-10-03" @default.
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- W2022067247 title "Room-Temperature Bonding of Oxide Wafers by Ar-beam Surface Activation" @default.
- W2022067247 doi "https://doi.org/10.1149/1.2982908" @default.
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