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- W2022080523 abstract "The fundamental lower limit on the turn on voltage of GaAs-based bipolar transistors is first established, then reduced with the use of a novel low energy-gap base material, Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/. InGaP/GaInAsN DHBTs (x/spl sim/3y/spl sim/0.01) with high p-type doping levels (/spl sim/3/spl times/10/sup 19/ cm/sup -3/) and dc current gain (/spl beta//sub max//spl sim/68 at 234 /spl Omega///spl square/) are demonstrated. A reduction in the turn-on voltage over a wide range of practical base sheet resistance values (100 to 400 /spl Omega///spl square/) is established relative to both GaAs BJTs and conventional InGaP/GaAs HBTs with optimized base-emitter interfaces-over 25 mV in heavily doped, high dc current gain samples. The potential to engineer turn-on voltages comparable to Si- or InP-based bipolar devices on a GaAs platform is enabled by the use of lattice matched Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/ alloys, which can simultaneously reduce the energy-gap and balance the lattice constant of the base layer when x/spl sim/3y." @default.
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- W2022080523 date "2000-12-01" @default.
- W2022080523 modified "2023-10-16" @default.
- W2022080523 title "Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/N<sub>y</sub> base layers" @default.
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- W2022080523 doi "https://doi.org/10.1109/55.887463" @default.
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