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- W2022086851 abstract "We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%." @default.
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- W2022086851 date "2014-10-09" @default.
- W2022086851 modified "2023-10-16" @default.
- W2022086851 title "19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO<sub>2</sub> Contact" @default.
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- W2022086851 doi "https://doi.org/10.1021/ph500153c" @default.
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