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- W2022088944 abstract "We investigated various p+ extension implantation dopant species (B, BF 2 , B 10 H 14 & B 18 H 22 ) and annealing techniques (spike, flash, laser and SPE) to achieve high dopant activation low damage ultra-shallow junctions (USJ) 15-20nm deep for 45nm node applications. New USJ metrology techniques were investigated to determine: 1) surface dopant activation level and 2) junction quality (residual implant damage) using contact and non-contact full wafer metrology methods. We discovered that using molecular dopant species (B 10 H 14 & B 18 H 22 ) either high temperature (flash or laser) annealing or low temperature SPE annealing are very promising for the 45nm node process integration with SiON or high-k Hf-based dielectric gate stack structures because of their wide temperature range for dopant activation without diffusion." @default.
- W2022088944 created "2016-06-24" @default.
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- W2022088944 date "2006-01-01" @default.
- W2022088944 modified "2023-09-24" @default.
- W2022088944 title "45nm Node p+ USJ Formation With High Dopant Activation And Low Damage" @default.
- W2022088944 doi "https://doi.org/10.1109/iwjt.2006.220849" @default.
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