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- W2022100403 abstract "Abstract Thin films of Cu-phthalocyanine were thermally deposited in UHV on pyrolytic graphite, n-Si(1 0 0), SiO 2 /n-Si, and SiO 2 /p-Si substrates. Atomic composition of the films was tested by Auger electron spectroscopy. Evolution of surface potential and density of electron states located 0–25 eV above vacuum level were monitored during the film deposition by means of total current electron spectroscopy (TCS). The resulting spectra of the 2–3 nm thick CuPc films on the different substrates were however identical. Admission of 10 −5 Pa O 2 and NO 2 resulted in a reversible decrease and increase of the film surface potential, respectively. A new peak in the TCS appeared and the spectrum was attenuated on the admission of the gases. These changes were attributed to the interaction between the film and the gas molecules adsorbed. The changes were reversible on the gas evacuation. White light illumination reduced (increased) surface potential of the Cu-phthalocyanine film on SiO 2 /n-Si (SiO 2 /p-Si) substrate. The gas sensitivity is attributed to the processes at the gas/CuPc film interface, while the photovoltaic properties are attributed to the processes at the CuPc film/substrate interface." @default.
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- W2022100403 title "Photo and gas sensitivity of thin Cu-phthalocyanine films studied by spectroscopy of unoccupied electron states" @default.
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