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- W2022109382 abstract "The surface versus bulk composition and electronic structure of polycrystalline CuInSe2 thin‐film interfaces were studied by synchrotron radiation soft‐x‐ray photoemission spectroscopy. An n‐type In2Se3/CuIn3Se5 surface layer forms on enhanced‐grain polycrystalline thin‐film p‐type CuInSe2 during fabrication. Enhanced‐grain CuInSe2 films were sputter etched (500 V Ar) and analyzed in situ to determine core‐level binding energies and Fermi‐level positions for the n‐type surface and the p‐type CuInSe2 bulk within ±0.1 eV. The transition between the n‐type surface and the p‐type bulk was experimentally observed by noting the change in the position of the valence‐band maximum relative to the Fermi level EF. From these measurements, the valence‐band offset ΔEv between the layers was determined to be 0.50 eV. Measurement of the work functions φ was also completed and reveals φ=4.75 eV for the In2Se3 (CuIn3Se5) surface layer and φ=4.04 eV for the bulk CuInSe2. Combining these results allows construction of a surface band diagram for this device configuration as well as determination of the relationship between composition, electronic structure, and device performance." @default.
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- W2022109382 date "1993-11-01" @default.
- W2022109382 modified "2023-09-25" @default.
- W2022109382 title "Photoemission investigation of the electronic structure at polycrystalline CuInSe<sub>2</sub>thin‐film interfaces" @default.
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- W2022109382 doi "https://doi.org/10.1063/1.354195" @default.
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