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- W2022109415 abstract "The influence of ion bombardment on the properties of metal films and metal-silicon, metal-silicon oxide interfaces has been studied, Al, Mo, Ti and Ni films were sputtered in vacuum at 400 K on n- and p-doped (100)Si and (100)Si substrates with a thermally grown oxide layer 0.15–0.3 μm thick. The irradiation was carried out with B + , P + , Ar + and S i+ ions at energies providing a variation of the relationship R p / d of projective ion range R p and metal film thickness d within 0.1–1.2. The irradiation dose varied over the range 1–100 μC. Variations of film adhesion to substrates as well as the rates of plasma-chemical etching of irradiated films have been investigated. A nonmonotonic dose dependence of adhesion variation was shown to be determined by the chemical nature of the bombarding ion. Deceleration of the etching rate of the irradiated metal films was found." @default.
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- W2022109415 date "1987-01-01" @default.
- W2022109415 modified "2023-09-27" @default.
- W2022109415 title "Ion modification of the properties of metal films evaporated on Si and SiO2" @default.
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