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• W2022120274 abstract "When thin uniform silicon targets are bombarded with energetic ions, macroscopic deformation of the target occurs in the irradiated region. This deformation, which is euphemistically termed a ``dimple'', may be interpreted as a radiation-induced lattice expansion. Measurement of the amount of deformation allows lattice expansion to be determined with a sensitivity comparable to or better than the most sensitive existing methods. Measurements on silicon irradiated at room temperature by 1.8-MeV He ions show that the lattice expansion at low flux increases essentially linearly with fluence below about 5×1016 He ion/cm−2, whereupon it increases more rapidly until saturation starts to occur at an order-of-magnitude higher fluence. Isochronal annealing results are discussed." @default.
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• W2022120274 date "1971-06-15" @default.
• W2022120274 modified "2023-09-23" @default.
• W2022120274 title "CHARGED-PARTICLE RADIATION DAMAGE OBSERVED AS DIMPLING OF THIN SILICON TARGETS" @default.
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• W2022120274 doi "https://doi.org/10.1063/1.1653528" @default.
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