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• W2022127004 abstract "We feature a 0.35-µm SiGe BiCMOS technology (SiGe 5PAe) that is optimized for power amplifier (PA) applications. The key feature of this technology is a novel low-inductance ground to the package using through-silicon vias (TSVs) that results in a competitive solution for future multiband and multimode PA integration. The tungsten-filled, multifinger, bar-shaped TSV delivers more than a 75% reduction in inductance compared to a traditional wirebond. This enables higher frequency applications with a roughly 20% reduction in die area without compromising the technology reliability for use conditions in a low-cost plastic QFN (quad flat no leads) package. In this paper we demonstrate the commercial feasibility of the TSV, its RF performance, its reliability, and its usefulness in a demanding WiMAX® (Worldwide Interoperability for Microwave Access) PA application." @default.
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• W2022127004 date "2008-11-01" @default.
• W2022127004 modified "2023-09-26" @default.
• W2022127004 title "Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications" @default.
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• W2022127004 doi "https://doi.org/10.1147/jrd.2008.5388563" @default.
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