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• W2022141110 abstract "Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-κ HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states." @default.
• W2022141110 created "2016-06-24" @default.
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• W2022141110 date "2009-01-26" @default.
• W2022141110 modified "2023-10-16" @default.
• W2022141110 title "Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric" @default.
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• W2022141110 doi "https://doi.org/10.1063/1.3077188" @default.
• W2022141110 hasPublicationYear "2009" @default.
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