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• W2022143403 abstract "A thermally stable multilayered transparent conducting oxide utilizing nanocomposite ZnO:TiO2 antireflection thin film (arc-ZnO:TiO2) on an indium–tin oxide (ITO) substrate has been prepared by radio frequency-magnetron sputtering. The effects of post-deposition annealing on the morphological, structural, optical and electrical properties were investigated with the aim to find the best conditions for the antireflection substrate. The X-ray diffraction behaviors of mixed type crystalline structures preferred at [2 2 2] and [1 0 1] between ITO and ZnO were observed, respectively. The grain size increased from 37.9 nm to 46.9 nm due to the aggregation of smaller grain during the annealing process. Average transmittances of approximately 82% were observed for all the samples in the range between 440 nm and 760 nm. A corresponding reduction in the reflectance of about 11% and 3% compared to bare ITO was achieved. The refractive index increased from 1.82 up to 2.0 due to the change in the packing density. For all ranges of annealing conditions, the arc-ZnO:TiO2 layers conserved the low resistivity of ITO at 1.96 × 10−4 Ω. In other words, the oxygen consumed in the annealing process improved the crystallinity of the film without much change to the resistivity of the ITO-based substrate. The increment of the root mean square roughness from 2.12 nm to 3.21 nm evidenced by the atomic force microscopy analysis was supported by the increment of grain growth." @default.
• W2022143403 created "2016-06-24" @default.
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• W2022143403 date "2013-08-01" @default.
• W2022143403 modified "2023-10-07" @default.
• W2022143403 title "Novel encapsulated ITO/arc-ZnO:TiO2 antireflective passivating layer for TCO conducting substrate prepared by simultaneous radio frequency-magnetron sputtering" @default.
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• W2022143403 doi "https://doi.org/10.1016/j.mee.2013.01.065" @default.
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