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- W2022147530 abstract "To obtain stable light contrast, a pattern accuracy, alignment accuracy and irradiation resistance of SOG have been investigated, and pattern layout has been optimized for the subresolution PSM and edge-line PSM. Satisfactory pattern accuracy and no deterioration in transmissivity index during exposure of 500,000 J/cm<SUP>2</SUP> have been confirmed on fabricated PSMs. Applying these PSMs to GaAs IC process, a fine gate finger pattern of 0.3 micrometers has successfully been formed without generation of undesirable pattern in the joint area of gate finer and large area pad." @default.
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- W2022147530 date "1995-07-03" @default.
- W2022147530 modified "2023-09-23" @default.
- W2022147530 title "Application of phase-shift mask to GaAs IC fabrication process" @default.
- W2022147530 doi "https://doi.org/10.1117/12.212786" @default.
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