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• W2022149568 abstract "Fe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>49</sub> Pt <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>51</sub> thin films with a thickness of 20 nm were deposited by conventional dc co-sputtering at substrate temperature of 400 and 500 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>°</sup> C before undergoing glow-discharge-induced ion bombardment at room temperature. The energy of the incident Ar ions was adjusted by applying a radio-frequency bias ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>b</sub> ) in the range of 50 to 600 V. Significant abilities of ion bombardment in modifying both chemical ordering and surface morphology are demonstrated. With <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>b</sub> in the range of 50 to 150 V, the bombardment smoothes the surface and enhances ordering by promoting surface diffusion. Bombarding at high <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>b</sub> greater than 200 V evolves the surface morphology towards discontinuous island-like structure or rough pinhole topography and causes disordering by progressive etching. The magnetic properties can be tuned with the structural transformations by ion bombardment. The coercivity ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>H</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> ) can be increased from 0.57 to 0.75 MA/m by improving ordering for the films deposited at 400 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>°</sup> C. On the other hand, the disordering and mass loss may produce the magnetic softening and drastically reduced magnetization." @default.
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• W2022149568 date "2012-11-01" @default.
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• W2022149568 title "Control of Surface Morphology and Magnetic Properties by Ion Bombardment in FePt Thin Films" @default.
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