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- W2022150585 abstract "Annealing of interface defects in metal-oxide-semiconductor (MOS) devices by x-ray irradiation has been observed. The effect occurs in rad-hard devices which had been previously damaged severely by high-field Fowler–Nordheim electron injection, but has not been observed in standard MOS devices which are not radiation-hardened. A mechanism based on the recombination-enhanced-defect-reactions process is proposed to explain the results." @default.
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- W2022150585 date "1993-06-14" @default.
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- W2022150585 title "Reduction of interface‐trap density in metal‐oxide‐semiconductor devices by irradiation" @default.
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- W2022150585 doi "https://doi.org/10.1063/1.109118" @default.
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