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• W2022171064 abstract "We have investigated the electro–optic properties of V-shaped InGaAs/GaAs quantum wires grown by MOCVD on patterned GaAs substrates. Two basic nanostructures have been fabricated: (i) single quantum wires and (ii) vertically stacked wires with different thickness of the barriers. The former exhibit a strong polarization anisotropy between the ground and the first excited states. The vertically stacked wires exhibit the formation of symmetric and antisymmetric states and a strong vertical coupling of the wavefunctions for narrow barrier widths. Based on these prototype structures we have fabricated an electro–optic modulator in wave-guide which exhibits a strong quantum confined Stark effect at room temperature, with bias as low as −2 V. The multiple wire stack has been used for the fabrication of a p–i–n quantum wire light emitter with the unprecedentedly low current threshold of 0.3 mA/cm2 at low temperature." @default.
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• W2022171064 date "1998-07-01" @default.
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• W2022171064 title "Electro–optic properties of InGaAs/GaAs quantum wires with V-shaped profile" @default.
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• W2022171064 doi "https://doi.org/10.1016/s0038-1101(98)00011-2" @default.
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