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- W2022189316 abstract "The growing interest in modern energy-saving illuminants for general lighting, multimedia applications and automotive industry demands for alternative low-cost substrates for MOVPE LED growth. Nitride MOVPE growth is possible on the Si (111) plane, which makes Si substrates attractive as an alternative to sapphire substrates. A novel technology is presented using patterned Si (100) substrates, in which MOVPE-grown LED structures are fabricated on Si {111} facets tilted by 54.7°. Structural and optical properties are discussed and correlated to epitaxial growth conditions. It is shown that crystal quality reaches already a reasonable level for preliminary LED operation." @default.
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- W2022189316 date "2014-04-01" @default.
- W2022189316 modified "2023-09-27" @default.
- W2022189316 title "Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates" @default.
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- W2022189316 doi "https://doi.org/10.1016/j.jcrysgro.2014.01.002" @default.
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