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- W2022190380 abstract "In this paper, high-performance contact etching stop layer (CESL)-strained n-metal-oxide-semiconductor field effect transistor (nMOSFET) with HfO 2 gate dielectrics has been successfully demonstrated. The effects of the CESL layer to the high-k without trapping behaviors are investigated by the pulse current-voltage (IV) technique for the first time. It is found that a roughly 55 and 60% increase of mobility and I ON , respectively, can be achieved for the 300 nm CESL HfO 2 nMOSFET using pulsed-IV measurement. Furthermore, a superior HfO 2 /Si interface for CESL devices is observed, demonstrated by an obvious interface state density reduction (6 × 10 11 -9 X 10 10 cm -2 )." @default.
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- W2022190380 date "2008-01-01" @default.
- W2022190380 modified "2023-10-18" @default.
- W2022190380 title "Performance and Interface Characterization for Contact Etch Stop Layer–Strained nMOSFET with HfO[sub 2] Gate Dielectrics under Pulsed-IV Measurement" @default.
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- W2022190380 doi "https://doi.org/10.1149/1.2938021" @default.
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