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• W2022196809 abstract "The optical transitions in Al0.35Ga0.65As/GaAs asymmetric double quantum wells (ADQWs) grown on GaAs(n11)A (n≤4) substrates were studied by photoluminescence at low temperatures. The redshift of two PL peaks for substrate orientation far from the (100) plane is attributed to the large anisotropy of the heavy-hole band in the different GaAs orientations. The energy difference of the two transitions also shows a similar shift. By comparing the PL measurements with a simple effective mass calculation, the effective mass of the heavy hole on GaAs(n11)A (n=1, 2, 3, 4) planes is found to be about 0.95, 0.73, 0.54 and 0.41m0, respectively. The effect of As pressures on PL peak energies in ADQWs is also studied. The As pressure-dependence of PL peak energies is attibuted to a decrease of the Ga desporption rate with increasing As pressures on GaAs(n11)A substrates." @default.
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• W2022196809 date "1999-04-01" @default.
• W2022196809 modified "2023-10-16" @default.
• W2022196809 title "Optical transitions of Al 0.35 Ga 0.65 As/GaAs asymmetric double quantum wells grown on GaAs( n 11)A ( n ≤4) substrates" @default.
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• W2022196809 doi "https://doi.org/10.1016/s0026-2692(98)00148-7" @default.
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