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• W2022204964 abstract "The energy distribution of interface states for MOS devices with atomically smooth and rough Si(111)/ultrathin oxide interfaces was obtained from measurements of X-ray photoelectron spectra under biases between the metal overlayer and the Si substrate. The interface state density for the smooth interface is always lower than that for the rougher interface. Synchrotron radiation ultraviolet photoelectron spectra show that the amount of the Si2+ species in the oxide layer is reduced by forming a smooth interface. It is proposed that the Si2+ species at step edges hinder the formation of complete SiO2 networks, resulting in the production of Si dangling bond interface states near them." @default.
• W2022204964 created "2016-06-24" @default.
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• W2022204964 date "1997-06-01" @default.
• W2022204964 modified "2023-09-26" @default.
• W2022204964 title "Effects of interface roughness on the density of interface states at ultrathin oxide/Si interfaces: XPS measurements under biases" @default.
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• W2022204964 doi "https://doi.org/10.1016/s0169-4332(97)80074-8" @default.
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