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• W2022215046 abstract "The optical properties of sputtered Cu2O thin films doped with the nitrogen concentrations between 1 and 2.5 at% have been investigated by spectrophotometric measurements. All the doped samples exhibit two clearly defined absorption bands at energies below the gap, with an intensity well correlated with the N concentration. This result suggests Cu2O as a promising material for the development of intermediate band solar cells, also considering the band gap of about 2 eV which is the optimal value for this kind of devices. Moreover, the sample with the highest doping shows a resistivity of 1.14Ωcm, which is the lowest value ever reported for this semiconductor. As a collateral result, we provide a first estimation of the Relative Sensitivity Factors (RSF) of nitrogen and oxygen atoms under Cs+ bombardment in a Cu2O matrix." @default.
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• W2022215046 date "2012-10-01" @default.
• W2022215046 modified "2023-09-23" @default.
• W2022215046 title "Nitrogen doped Cu2O: A possible material for intermediate band solar cells?" @default.
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• W2022215046 doi "https://doi.org/10.1016/j.solmat.2012.06.017" @default.
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