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• W2022222548 abstract "The impacts of interfacial layer (IFL) thickness and crystallinity of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /IFL bi-layer on electrical properties were clarified using synchrotron radiation photoemission spectroscopy (SRPES) and electrical measurements of nFETs (HfSi <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) and pFETs (Ru/HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) including BTI. It was found that crystallization of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> causes significant degradation in electron mobility and PBTI, whereas the impacts on hole mobility and NBTI are negligible. The SRPES measurement revealed that the crystallization temperature depends on HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thickness. We also found that the IFL thickness is the dominant factor for both electron mobility and PBTI. Therefore, a careful optimization of the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /IFL bi-layer is indispensable. We proposed a novel technique for controlling the bi-layer thickness and demonstrated dual metal CMOS devices with high mobility and high reliability even by a post high-k process lower than 500degC for the very first time." @default.
• W2022222548 created "2016-06-24" @default.
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• W2022222548 date "2007-01-01" @default.
• W2022222548 modified "2023-09-25" @default.
• W2022222548 title "High Performance and High Reliability Dual Metal CMOS Gate Stacks Using Novel High-k Bi-layer Control Technique" @default.
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• W2022222548 doi "https://doi.org/10.1109/vtsa.2007.378913" @default.
• W2022222548 hasPublicationYear "2007" @default.
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