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- W2022231324 abstract "We have monitored monolayer (ML) growth of GaAs at 650 °C by metalorganic chemical vapor deposition using surface photoabsorption (SPA). AlGaAs quantum well (QW) structures were grown by monitoring SPA oscillations. Photoluminescence measurements of these QWs show excellent agreement between the observed spectra and model calculations in both peak energies and line width, confirming that the growth rate was 1 ML per cycle and that the roughness at the interface was <1 ML." @default.
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- W2022231324 date "1998-01-15" @default.
- W2022231324 modified "2023-09-27" @default.
- W2022231324 title "Thickness monitoring of GaAs growth by surface photoabsorption in metalorganic chemical vapor deposition" @default.
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- W2022231324 doi "https://doi.org/10.1063/1.366757" @default.
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