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- W2022241435 abstract "Abstract The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol–gel SiO 2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol–gel SiO 2 (1.9 A root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm 2 /Vs, on–off ratio of 10 7 , and a subthreshold swing of 102 mV/decade when operating at −20 V." @default.
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- W2022241435 date "2007-08-01" @default.
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- W2022241435 title "Improved pentacene device characteristics with sol–gel SiO2 dielectric films" @default.
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- W2022241435 doi "https://doi.org/10.1016/j.orgel.2006.12.006" @default.
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