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• W2022255595 startingPage "091909" @default.
• W2022255595 abstract "The temperature-induced quenching of the Er3+ luminescence is a significant problem in silicon-based materials systems ultimately designed for room-temperature applications. Here, we show that amorphous silicon-rich oxide, moderately annealed in order to avoid growth of Si nanocrystals, exhibits a reversed temperature dependence in which the integrated Er3+ luminescence increases in intensity upon heating from 77 up to 300 K. This behavior is attributed to a unique spectrum of interacting defects that efficiently sensitize the Er3+ levels, even in the absence of nanocrystals. The effect could have ramifications in fiber-optic emitters or amplifiers to be operated at noncryogenic temperatures." @default.
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• W2022255595 date "2009-08-31" @default.
• W2022255595 modified "2023-10-14" @default.
• W2022255595 title "Reversing the temperature dependence of the sensitized Er3+ luminescence intensity" @default.
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• W2022255595 doi "https://doi.org/10.1063/1.3220060" @default.
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