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• W2022258566 abstract "We report the transport and photoluminescence (PL) properties of silicon-doped GaInP layers grown on GaAs (100) substrate using a valved phosphorus cracker cell in solid source molecular beam epitaxy. Within the range of silicon (Si) effusion cell temperature investigated (900–1200 °C), the highest electron concentration obtained was 7.7×1018 and 3.2×1018 cm−3 at room temperature and 77 K, respectively. The concentration decreased with further increase in the silicon cell temperature. The Hall mobility at 300 K varied from 356 to 1720 cm2/V s within the range of electron concentration measured (4.5×1016–7.7×1018 cm−3). Except for the sample grown at the highest silicon cell temperature (1200 °C), the PL spectrum of other samples showed a dominant peak attributed to Si donor-to-band transition (D–B), which shifted to higher energy following an increase in the electron concentration. This phenomenon was attributed to the Burstein–Moss effect. The blueshift of the (D–B) transition peak at increasing temperature was attributed to thermal ionization of the Si donors. The sample grown at the highest Si cell temperature showed a PL peak at ∼1.913 eV which was attributed to transition between the conduction band and Si acceptor (B–A), with an activation energy of ∼57.2 meV as deduced from the PL spectrum. Temperature-dependent Hall measurements confirmed the amphoteric behavior of the Si dopant in this sample. The PL intensity at 10 K decreased and the full width at half maximum increased significantly from ∼8 to ∼32 meV following an increase in the electron concentration from 4.5×1016 to 7.7×1018 cm−3." @default.
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• W2022258566 date "1999-05-15" @default.
• W2022258566 modified "2023-09-26" @default.
• W2022258566 title "Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy" @default.
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• W2022258566 doi "https://doi.org/10.1063/1.369365" @default.
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