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- W2022271895 abstract "AC hot-carrier effects in n-MOSFETs with thin ( approximately 85 AA) N/sub 2/O-nitrided gate oxides have been studied and compared with control devices with gate oxides grown in O/sub 2/. Results show that furnace N/sub 2/O-nitrided oxide devices exhibit significantly reduced AC-stress-induced degradation. In addition, they show weaker dependences of device degradation on applied gate pulse frequency and pulse width. Results suggest that the improved AC-hot-carrier immunity of the N/sub 2/O-nitrided oxide device may be due to the significantly suppressed interface state generation and neutral electron trap generation during stressing.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2022271895 date "1992-06-01" @default.
- W2022271895 modified "2023-09-26" @default.
- W2022271895 title "AC hot-carrier effects in MOSFETs with furnace N/sub 2/O-nitrided gate oxides" @default.
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- W2022271895 doi "https://doi.org/10.1109/55.145078" @default.
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