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- W2022272028 abstract "We report in this letter the results of experiments comparing the electrical properties of low-temperature epitaxial silicon deposited by plasma-enhanced chemical vapor deposition (PECVD) and ultralow pressure chemical vapor deposition (U-LPCVD). Diode characteristics indicate a strong dependence of the electrical quality of the PECVD films on the plasma power. The data indicate that, in contrast to a purely thermal deposition (the U-LPCVD films), a low-power PECVD deposition (2.5–5 W) improves the electrical quality of the epitaxial layers and lowers the minimum epitaxy temperature. A high-power plasma (20 W), however, degrades the electrical characteristics in comparison to a strictly thermal deposition." @default.
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- W2022272028 date "1988-09-05" @default.
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- W2022272028 title "Enhanced electrical quality of low-temperature (<i>T</i>dep≤800 °C) epitaxial silicon deposited by plasma-enhanced chemical vapor deposition" @default.
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- W2022272028 doi "https://doi.org/10.1063/1.100106" @default.
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