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- W2022272047 abstract "As part of a general investigation into the properties of gallium arsenide, the Hall coefficient and resistivity of three pure samples have been measured from 300 to 2ifmmode^circelsetextdegreefi{}K. The highest mobility measured at 300ifmmode^circelsetextdegreefi{}K was 7200 ${mathrm{cm}}^{2}$/V-sec increasing to 22 000 ${mathrm{cm}}^{2}$/V-sec at 72ifmmode^circelsetextdegreefi{}K, the mobility temperature curve following the theory of Ehrenreich very closely. At helium temperatures impurity conduction was observed with the resistivity $ensuremath{rho}ensuremath{propto}mathrm{exp}(ensuremath{-}frac{{ensuremath{epsilon}}_{1}}{mathrm{kT}})$ and ${ensuremath{epsilon}}_{1}$ varying from 9.8ifmmodetimeselsetexttimesfi{}${10}^{ensuremath{-}5}$ eV to 5.8ifmmodetimeselsetexttimesfi{}${10}^{ensuremath{-}4}$ eV. A discussion of these results is given in terms of the theory of Miller and Abrahams and Twose.In one sample, below about 30ifmmode^circelsetextdegreefi{}K the current was not a linear function of the voltage. This arises from a dependence of mobility on applied electric field and because carriers can be excited from impurity states to the conduction band. An analysis of the energy loss processes for electrons suggest that piezoelectric scattering is the most important mechanism below about 30ifmmode^circelsetextdegreefi{}K but that above this temperature optical scattering is dominant. Impact ionization occurs between 4 and 12ifmmode^circelsetextdegreefi{}K." @default.
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- W2022272047 date "1962-08-15" @default.
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- W2022272047 title "Electrical Properties of<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>n</mml:mi></mml:math>-Type Gallium Arsenide" @default.
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- W2022272047 doi "https://doi.org/10.1103/physrev.127.1045" @default.
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