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• W2022272270 abstract "We investigate the initial interface formation of oxide/C-terminated β-SiC(100) c(2×2) and oxide/C-rich β-SiC(100) 1×1 surfaces by Si 2p and C 1s core level photoemission spectroscopy using synchrotron radiation. Contrary to the Si-rich SiC surfaces, the C-terminated and C-rich surfaces are much less reactive to oxygen, with much higher exposures and temperatures required to grow a significant amount of oxides. This leads to nonabrupt oxide/SiC interface formation including predominantly mixed oxide products containing carbon species, with marginal amounts of SiO2 only. The lack of dangling bonds on the surface together with the C plane and/or graphitic species limiting oxygen insertion into the SiC lattice are likely at the origin of this very different behavior when compared to Si-rich SiC surfaces." @default.
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• W2022272270 date "2004-07-01" @default.
• W2022272270 modified "2023-10-09" @default.
• W2022272270 title "Initial oxide/SiC interface formation on C-terminated β-SiC(100) c(2×2) and graphitic C-rich β-SiC(100) 1×1 surfaces" @default.
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• W2022272270 doi "https://doi.org/10.1116/1.1768532" @default.
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