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• W2022275301 abstract "(Pb, La) (Zr, Ti)O 3 (PLZT) antiferroelectric thick films were deposited on Pt (111)/ Ti/SiO 2 /Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the films derived on Pt (111)/ Ti/SiO 2 /Si (100) substrates showed strong (111) preferred orientation. The Bulk and Surface silicon of micromachining process were employed in the silicon-based antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT, inductive couple plasmas (ICP)for silicon etching, platinum etching and so on. Challenges such as Pt/Ti bottom electrode and morphology of PLZT thick film were solved, the integration of functional antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and manufacture of micro-actuators." @default.
• W2022275301 created "2016-06-24" @default.
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• W2022275301 date "2011-07-01" @default.
• W2022275301 modified "2023-09-26" @default.
• W2022275301 title "Microcantilevers Fabrication Process of Silicon-Based (Pb, La)(Zr, Ti)O₃ Antiferroelectric Thick Films for Microactuator Applications" @default.
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• W2022275301 doi "https://doi.org/10.4028/www.scientific.net/amm.80-81.13" @default.
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