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- W2022321177 abstract "A boost converter was constructed using a high voltage enhancement mode (E-mode) AlGaN/GaN/AlGaN DHFET transistor grown on Si . The very low dynamic on-resistance (R dyn ≈ 0.23 Ω) and very low gate-charges (e.g. Q gate ≈ 15 nC at V DS = 200 V) result in minor transistor losses. Together with a proper design of the passive components and the use of SiC diodes, very high overall efficiencies are reached. Measurements show high conversion efficiencies of 96.1% (P out = 106 W, 76 to 142 V at 512.5 kHz) and 93.9% (P out = 97.5 W, 78 to 142 V at 845.2 kHz). These are, to our knowledge, the highest efficiencies reported for an enhancement mode GaN DHFET on Si in this frequency range. The transistor switching losses are concentrated in the turn-on interval, and dominate at high frequencies. This is due to a limited positive gate-voltage swing, as the gate-source diode restricts the positive drive voltage." @default.
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- W2022321177 date "2010-09-01" @default.
- W2022321177 modified "2023-09-30" @default.
- W2022321177 title "A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon" @default.
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- W2022321177 doi "https://doi.org/10.1109/ecce.2010.5618323" @default.
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