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- W2022337813 abstract "The properties of ion-implanted layers in undoped s.i. GaAs substrates have been studied and found to be correlated to the initial bulk resistivity of the wafers, which in turn is determined by the content of residual shallow acceptors. With decreasing resistivity from gtrsim 10 8 Ωcm to lesssim 10 7 Ωcm the implanted layer sheet resistance decreases, the pinch-off voltage increases and the carrier profiles become broader. High purity material with very low background acceptor concentration shows highest carrier activation and superior reproducibility and appears to be favourable for ion-implantation applications. The results are in agreement with the substrate barrier model." @default.
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- W2022337813 date "1990-01-01" @default.
- W2022337813 modified "2023-09-27" @default.
- W2022337813 title "Dependence of GaAs Ion-Implanted Layer Characteristics on Substrate Resistivity and Residual Acceptor Concentration" @default.
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