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• W2022338312 abstract "Inductively coupled plasma reactive ion etching of gallium indium zinc oxide (GIZO) thin films patterned with a photoresist was studied using a Cl 2 /Ar gas. As the Cl 2 concentration was increased from pure Ar to 40% Cl 2 concentration, the etch rate of GIZO films increased, and thereafter gradually decreased. The etch rate increased with increasing coil rf power and dc bias voltage. A high degree of anisotropy was achieved with increasing coil rf power and dc-bias voltage, and decreasing gas pressure. X-ray photoelectron spectroscopy of the etched films revealed that chemical compounds were formed during the etching process, indicating that the etching of GIZO films is governed by a reactive ion etching mechanism." @default.
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• W2022338312 date "2010-08-01" @default.
• W2022338312 modified "2023-09-25" @default.
• W2022338312 title "Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films Using Cl₂/Ar Gas Mix" @default.
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• W2022338312 doi "https://doi.org/10.1143/jjap.49.08jb01" @default.
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