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• W2022376172 endingPage "3442" @default.
• W2022376172 startingPage "3429" @default.
• W2022376172 abstract "We report the growth of high-quality As-based ternary and quaternary alloys lattice matched to InP using a valved arsenic source that can post-heat the As beam after evaporation. We find that the optimum group-V-to-group-III beam-equivalent pressure ratio for growth of (In,Ga)As alloys using this source is considerably lower than values reported previously for growth using conventional As4 sources. Consequently, high-quality (In,Ga)As, (In,Al)As, and (In,Al,Ga)As alloys (and quantum wells made from these alloys) can be grown under the same growth conditions, i.e., substrate temperatures between about 525 °C and 540 °C and V/III pressure ratios between 10:1 and 15:1. Thick-film alloys and multiple-quantum-well structures grown under these conditions show superior structural and optical quality. Strong excitonic features are observed in the room-temperature absorption spectra of a number of multiple-quantum-well structures with well widths ranging from 30 Å to 170 Å . Calculations of the exciton transition energies using a simple empirical two-band model are in excellent agreement with experiment, even for a structure containing quantum wells in tensile strain in which the ordering of ground-state light- and heavy-hole excitons is reversed. The optical absorption spectrum of a 50-Å -period (In,Ga)As/(In,Al)As superlattice shows room-temperature excitons involving electronic states at both the bottom and top of the minibands. Exciton line widths for these quantum-well structures, measured using low-temperature photoluminescence, are consistent with the limits imposed by random alloy fluctuations. We tentatively explain the lower optimum V/III pressure ratio for growth of (In,Ga)As in terms of the increase in kinetic energy of As4 molecules (compared with the kinetic energy of molecules from a conventional As4 source) and the consequent enhancement in the efficiency of dissociation of As4 molecules into As2 molecules at the growing surface." @default.
• W2022376172 created "2016-06-24" @default.
• W2022376172 creator A5012609757 @default.
• W2022376172 creator A5080307876 @default.
• W2022376172 date "1994-09-15" @default.
• W2022376172 modified "2023-10-14" @default.
• W2022376172 title "Molecular-beam-epitaxial growth and characterization of high-quality alloys and multiple quantum wells on InP substrates using a post-evaporation-heated arsenic source" @default.
• W2022376172 cites W1613752874 @default.
• W2022376172 cites W1617508307 @default.
• W2022376172 cites W1965734645 @default.
• W2022376172 cites W1965763810 @default.
• W2022376172 cites W1968915965 @default.
• W2022376172 cites W1977001011 @default.
• W2022376172 cites W1978984704 @default.
• W2022376172 cites W1979302139 @default.
• W2022376172 cites W1984957284 @default.
• W2022376172 cites W1990285418 @default.
• W2022376172 cites W1996890482 @default.
• W2022376172 cites W1998823433 @default.
• W2022376172 cites W1999165239 @default.
• W2022376172 cites W2002761825 @default.
• W2022376172 cites W2012659948 @default.
• W2022376172 cites W2013852721 @default.
• W2022376172 cites W2019750575 @default.
• W2022376172 cites W2019922714 @default.
• W2022376172 cites W2025820155 @default.
• W2022376172 cites W2034253953 @default.
• W2022376172 cites W2038846626 @default.
• W2022376172 cites W2040547874 @default.
• W2022376172 cites W2046523288 @default.
• W2022376172 cites W2050636987 @default.
• W2022376172 cites W2054434140 @default.
• W2022376172 cites W2055069633 @default.
• W2022376172 cites W2062261196 @default.
• W2022376172 cites W2075492439 @default.
• W2022376172 cites W2075806841 @default.
• W2022376172 cites W2083574300 @default.
• W2022376172 cites W2085654245 @default.
• W2022376172 cites W2086358445 @default.
• W2022376172 cites W2090125612 @default.
• W2022376172 cites W2101732624 @default.
• W2022376172 cites W2166473040 @default.
• W2022376172 cites W269019490 @default.
• W2022376172 cites W290934278 @default.
• W2022376172 cites W2052896395 @default.
• W2022376172 doi "https://doi.org/10.1063/1.357473" @default.
• W2022376172 hasPublicationYear "1994" @default.
• W2022376172 type Work @default.
• W2022376172 sameAs 2022376172 @default.
• W2022376172 citedByCount "14" @default.
• W2022376172 countsByYear W20223761722012 @default.
• W2022376172 countsByYear W20223761722016 @default.
• W2022376172 crossrefType "journal-article" @default.
• W2022376172 hasAuthorship W2022376172A5012609757 @default.
• W2022376172 hasAuthorship W2022376172A5080307876 @default.
• W2022376172 hasConcept C105382558 @default.
• W2022376172 hasConcept C110738630 @default.
• W2022376172 hasConcept C119824511 @default.
• W2022376172 hasConcept C120665830 @default.
• W2022376172 hasConcept C121332964 @default.
• W2022376172 hasConcept C132612359 @default.
• W2022376172 hasConcept C171250308 @default.
• W2022376172 hasConcept C17729963 @default.
• W2022376172 hasConcept C192562407 @default.
• W2022376172 hasConcept C199360897 @default.
• W2022376172 hasConcept C207114421 @default.
• W2022376172 hasConcept C26873012 @default.
• W2022376172 hasConcept C2779227376 @default.
• W2022376172 hasConcept C29169072 @default.
• W2022376172 hasConcept C3792809 @default.
• W2022376172 hasConcept C41008148 @default.
• W2022376172 hasConcept C49040817 @default.
• W2022376172 hasConcept C520434653 @default.
• W2022376172 hasConcept C61441594 @default.
• W2022376172 hasConcept C64452783 @default.
• W2022376172 hasConcept C85080765 @default.
• W2022376172 hasConcept C97355855 @default.
• W2022376172 hasConceptScore W2022376172C105382558 @default.
• W2022376172 hasConceptScore W2022376172C110738630 @default.
• W2022376172 hasConceptScore W2022376172C119824511 @default.
• W2022376172 hasConceptScore W2022376172C120665830 @default.
• W2022376172 hasConceptScore W2022376172C121332964 @default.
• W2022376172 hasConceptScore W2022376172C132612359 @default.
• W2022376172 hasConceptScore W2022376172C171250308 @default.
• W2022376172 hasConceptScore W2022376172C17729963 @default.
• W2022376172 hasConceptScore W2022376172C192562407 @default.
• W2022376172 hasConceptScore W2022376172C199360897 @default.
• W2022376172 hasConceptScore W2022376172C207114421 @default.
• W2022376172 hasConceptScore W2022376172C26873012 @default.
• W2022376172 hasConceptScore W2022376172C2779227376 @default.
• W2022376172 hasConceptScore W2022376172C29169072 @default.
• W2022376172 hasConceptScore W2022376172C3792809 @default.
• W2022376172 hasConceptScore W2022376172C41008148 @default.
• W2022376172 hasConceptScore W2022376172C49040817 @default.
• W2022376172 hasConceptScore W2022376172C520434653 @default.
• W2022376172 hasConceptScore W2022376172C61441594 @default.
• W2022376172 hasConceptScore W2022376172C64452783 @default.
• W2022376172 hasConceptScore W2022376172C85080765 @default.

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