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- W2022382328 abstract "Resistive switching memory (RRAM) offers fast switching, high endurance and low power operation. RRAM is therefore targeted as a high-density technology for post 3D Flash. High-density application, however, requires operation at low current below 10 µA, which is prone to program variability and random telegraph noise (RTN). This work presents a physics-based model for RTN in RRAM, based on trap-induced depletion of the conductive filament (CF). Voltage-dependent RTN is described by localized Joule heating, as supported by RTN experiments at variable temperature." @default.
- W2022382328 created "2016-06-24" @default.
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- W2022382328 date "2014-06-01" @default.
- W2022382328 modified "2023-09-27" @default.
- W2022382328 title "Voltage-dependent random telegraph noise (RTN) in HfO<inf>x</inf> resistive RAM" @default.
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- W2022382328 doi "https://doi.org/10.1109/irps.2014.6861159" @default.
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