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- W2022382609 abstract "The chemical effects of annealing two cases of three-phase structures: ZnS-anodic-oxide-Hg1−xCdxTe and ZnS-anodic-fluoride-Hg1−xCdxTe used in infrared detector devices was studied using Auger electron spectroscopy. The presence of the three-element stable ion TeO32− in the HgCdTeO system and the absence of an analog three-element ion in the HgCdTeF system lead to completely different degradation mechanisms in the two structures studied. While the anodic oxide reacts readily with the underlying semiconductor, forming CdTeO3, the anodic fluoride is relatively stable in contact with the Hg1 −xCdxTe. On the other hand, the anodic fluoride reacts with the ZnS overlayer forming the stable ZnF2 and ZnTeO3 compounds and Te or HgTe. Electrical devices fabricated on Hg1 −xCdxTe using the two-layer ZnS-anodic-fluoride passivation process have a higher thermal stability than devices with the anodic oxide since the strong chemical interaction occurs at the ZnS-anodic-fluoride rather than at the critical fluoride-Hg1 −xCdxTe interface." @default.
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- W2022382609 date "1992-01-01" @default.
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- W2022382609 title "Chemical effects of annealing ZnS-capped anodic films on Hg1−xCdxTe(x≈0.2)" @default.
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- W2022382609 doi "https://doi.org/10.1016/0169-4332(92)90217-l" @default.
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