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• W2022386496 abstract "Ion-beam mixing of Fe∕Si bilayers, induced at room temperature by 100keV Ar+40, 180keV Kr+86, and 250keV Xe+132 ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe∕Si interface was, on average, by 76% higher than that of crystalline Si." @default.
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• W2022386496 date "2007-01-29" @default.
• W2022386496 modified "2023-10-16" @default.
• W2022386496 title "Enhanced interface mixing of Fe∕Si bilayers on preamorphized silicon substrates" @default.
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• W2022386496 doi "https://doi.org/10.1063/1.2432952" @default.
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