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- W2022471362 abstract "Abstract We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x10 18 /cm 2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO 2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO 2 ." @default.
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- W2022471362 date "1987-01-01" @default.
- W2022471362 modified "2023-10-18" @default.
- W2022471362 title "Formation of Buried Oxide in Mev Oxygen Implanted Silicon" @default.
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- W2022471362 doi "https://doi.org/10.1557/proc-107-73" @default.
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