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• W2022472006 endingPage "451" @default.
• W2022472006 startingPage "443" @default.
• W2022472006 abstract "In this paper, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated epitaxial-anode 4H-SiC PiN diodes with thick (110 μm) drift regions is presented, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material having undergone this process, which consisted of a thermal oxidation in dry pure O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> at 1550°C followed by an argon anneal at the same temperature. Forward current-voltage characterization showed that the oxidised/annealed samples typically showed around 15% lower forward voltage drop and around 40% lower differential on-resistance (at 100 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and 25°C) compared to control sample PiN diodes, whilst reverse recovery tests indicated a carrier lifetime increase also of around 40%. These findings illustrate that the use of this process is a highly effective and efficient way of improving the electrical characteristics of high voltage 4H-SiC bipolar devices." @default.
• W2022472006 created "2016-06-24" @default.
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• W2022472006 date "2014-08-01" @default.
• W2022472006 modified "2023-10-18" @default.
• W2022472006 title "Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process" @default.
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• W2022472006 doi "https://doi.org/10.1109/tsm.2014.2336701" @default.
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