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- W2022473398 abstract "Abstract We present atomically resolved scanning tunneling microscopy images taken in situ from Si(0 0 1) substrates which were prepared at low temperatures. In accordance with previous ex situ atomic force microscopy investigations the obtained surfaces are indeed flat and nearly contamination-free. On atomic scale broad (1×2) reconstructed terraces are resolved which are mainly separated by single steps. In contrast to samples conventionally prepared at high temperatures, however, the density of intrinsic defects––particularly of dimer vacancies and ad-dimers––is strongly increased and can be reduced by extended annealing procedures." @default.
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- W2022473398 date "2002-11-01" @default.
- W2022473398 modified "2023-09-26" @default.
- W2022473398 title "Atomic structure of low temperature prepared Si(001) substrates" @default.
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- W2022473398 doi "https://doi.org/10.1016/s0039-6028(02)02296-3" @default.
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