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- W2022502328 abstract "The interface formation in CuIn1 − xGaxSe2 (CIGS) based solar cells with In2S3 buffer layer deposited by ultrasonic spray pyrolysis (USP) is presented. The photovoltaic properties of solar cells with USP-In2S3 buffer depend strongly on the [Ga]/([Ga] ± [In]) ratio in the bulk of the absorber and on the surface composition. It was found that the band alignment between the CIGS and In2S3 changes from spike to cliff at a [Ga]/([Ga] ± [In]) ratio between 0.22 and 0.23. A significant increase in VOC and FF is observed for CIGS solar cells with USP-In2S3 buffer layer after device annealing at 200 °C in air, which can be correlated to an increase in activation energy caused by a band gap widening of the surface region of the absorber due to copper depletion." @default.
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- W2022502328 date "2011-08-01" @default.
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- W2022502328 title "Interface formation between CuIn1−xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis" @default.
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- W2022502328 doi "https://doi.org/10.1016/j.tsf.2011.01.370" @default.
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