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- W2022603124 abstract "The generation mechanism of crystallographic defects in Czochralski silicon degenerately doped with boron during low temperature processing was studied. After an extended annealing at 900 °C, the primary defects were identified as the a/2〈110〉-type elongated hexagonal- and a/6〈211〉-type rhombus-shaped dislocation loops using the transmission electron microscope. A low density of bulk stacking faults of the type a/3〈111〉 was also observed. No oxide precipitates were detected. After subsequent high temperature annealing, no significant change in the morphology or density of the interstitial-type defects was observed. Based upon the present results, it is hypothesized that aggregations of silicon interstitials and interstitial defect species during low temperature annealing could be one of the generation mechanisms of crystallographic defects in degenerately doped silicon." @default.
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- W2022603124 title "Aggregations of silicon interstitials and interstitial defect species in Czochralski silicon degenerately doped with boron during low temperature processing" @default.
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