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• W2022644946 abstract "Abstract We demonstrate MISFETs based on GaN p‐epilayers with ion‐implanted source/drain regions and atomic layer deposited (ALD) gate dielectrics of Al 2 O 3 and HfO 2 . The fabrication technology is similar to that used for silicon MOSFETs. We find that there are significant shifts (of order 1 V) in threshold voltage between FETs produced with Al 2 O 3 and HfO 2 films, enabling depletion mode and enhancement mode device operation for the same substrate doping. The GaN MISFETs obtained maximum drain current of 580mA/mm and an extrinsic transconductance as high as 160 mS/mm. To the authors' knowledge, the transconductance achieved represents record performance for ion‐implanted MISFETs of GaN without heterostructure barriers. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
• W2022644946 created "2016-06-24" @default.
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• W2022644946 date "2013-02-18" @default.
• W2022644946 modified "2023-09-27" @default.
• W2022644946 title "High transconductance ion‐implanted GaN MISFETs using atomic layer deposited high‐k dielectrics" @default.
• W2022644946 doi "https://doi.org/10.1002/pssc.201200625" @default.
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